The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. Comes in capacities of up to 2TB, with reliability of up to 1,200 TBW.
The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53%* faster than the 970 EVO. Powered by the latest V-NAND technologyâ€”which brings greater NAND performance and higher power efficiencyâ€”along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost speed.
The next advancement in NVMe SSDs. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung's innovative technology empowers you with the capacity to do more and accomplish more.
The new standard in sustainable performance. Get up to 1,200 TBW* with a 5-year limited warranty for lasting performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung's reputation for quality.
Achieve a new level of drive confidence. Samsung's advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.
970 EVO Plus
PCIe Gen 3.0 x 4, NVMe 1.3
2,000GB (1GB is 1 Billion byte by IDEMA) Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Sequential Read Speed
Up to 3,500 MB/s Performance may vary based on system hardware and configuration
Sequential Write Speed
Up to 3,300 MB/s Performance may vary based on system hardware and configuration
Random Read Speed
Random Read (4KB, QD32): Up to 620,000 IOPS Random Read (4KB, QD1): Up to 19,000 IOPS Performance may vary based on system hardware and configuration
Random Write Speed
Random Write (4KB, QD32): Up to 560,000 IOPS Random Write (4KB, QD1): Up to 62,000 IOPS Performance may vary based on system hardware and configuration
Samsung Phoenix Controller
Samsung V-NAND 3-bit MLC
Samsung 1GB Low Power DDR4 SDRAM
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
GC (Garbage Collection)
Auto Garbage Collection Algorithm
Device Sleep Mode Support
Average Power Consumption (system level)
Average: 6 W Maximum: 9 W (Burst mode) Actual power consumption may vary depending on system hardware and configuration
Power consumption (Idle)
Max. 30 mW Actual power consumption may vary depending on system hardware and configuration
3.3 V +/- 5 % Allowable voltage
1.5 Million Hours Reliability (MTBF)
0 - 70 oC Operating Temperature
1,500 G and 0.5 ms (Half sine)
Magician Software for SSD management
Item Dimension (L"xW"xH")
6 x 4 x 1